Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.1mm, 2SP - ALC101001S2 In Max heating or cooling rate

Max heating or cooling rate < 5oC/ minute

Back surface: 1 +/- 0

two sides polished

no plug will be included)

Surface Roughness: < 50 microns

Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.1mm, 2SP - ALC101001S2 In Max heating or cooling rateFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 1(+ 0. 05) mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A two sides polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic